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Freescale Semiconductor Technical Data
Document Number: MRF6S21100H Rev. 7, 1/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications. * Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 950 mA, Pout = 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 15.9 dB Drain Efficiency -- 27.6% IM3 @ 10 MHz Offset -- - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 39.5 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S21100HR3 MRF6S21100HSR3
2110 - 2170 MHz, 23 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF6S21100HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF6S21100HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg Tc TJ Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 200 Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 100 W CW Case Temperature 77C, 23 W CW Symbol RJC Value (1,2) 0.45 0.52 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF6S21100HR3 MRF6S21100HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 3A (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 950 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.5 -- pF VGS(th) VGS(Q) VDS(on) 1 2 0.1 2 2.8 0.21 3 4 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 23 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps D IM3 ACPR IRL 14.5 26 -- -- -- 15.9 27.6 - 37 - 39.5 - 16 17.5 -- - 35 - 38 -9 dB % dBc dBc dB
MRF6S21100HR3 MRF6S21100HSR3 2 RF Device Data Freescale Semiconductor
B1 VBIAS R1 R2 + C1 + C2 C4 C3 C5 Z8 Z5 RF INPUT Z1 C6 DUT Z2 Z3 Z4 Z6 Z7 Z9 Z10 Z11 C7 Z12 RF OUTPUT C8 + C9 + C10 + C11 C13 + C12 VSUPPLY + C14
Z1, Z12 Z2 Z3 Z4 Z5 Z6
1.250 1.070 0.330 0.093 1.255 0.160
x 0.084 x 0.084 x 0.800 x 0.800 x 0.040 x 0.880
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z7 Z8 Z9 Z10 Z11 PCB
0.320 x 0.880 Microstrip 0.120 x 0.820 Microstrip 0.035 x 0.320 Microstrip 0.335 x 0.200 Microstrip 0.650 x 0.084 Microstrip Arlon GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 1. MRF6S21100HR3(SR3) Test Circuit Schematic
Table 5. MRF6S21100HR3(SR3) Test Circuit Component Designations and Values
Part B1 C1 C2 C3 C4, C13 C5 C6, C7 C8 C9, C10, C11, C12 C14 R1 R2 Ferrite Bead 1.0 F, 50 V Tantalum Capacitor 10 F, 50 V Electrolytic Capacitor 1000 pF 100B Chip Capacitor 0.1 F 100B Chip Capacitors 5.1 pF Chip Capacitor 15 pF Chip Capacitors 6.8 pF Chip Capacitors 22 F, 35 V Tantalum Capacitors 100 F, 50 V Electrolytic Capacitor 1.0 kW, 1/8 W Chip Resistor 10 W, 1/8 W Chip Resistor Description Part Number 2743019447 T491C105M050AT EEV - HB1H100P ATC100B102JT500XT CDR33BX104AKWY ATC100B5R1JT500XT ATC100B150JT500XT ATC100B6R8JT500XT T491X226K035AT 515D107M050BB6AE3 CRCW08051000FKTA CRCW080510R0FKTA Manufacturer Fair - Rite Kemet Panasonic ATC Kemet ATC ATC ATC Kemet Vishay/Sprague Vishay Vishay
MRF6S21100HR3 MRF6S21100HSR3 RF Device Data Freescale Semiconductor 3
R1 C1 B1 R2 C5 C8
C9 C10
C14
VGG C11 C2 C4 C6 C3 C12
VDD
C13
C7
CUT OUT AREA
2.1 GHz NI780 Rev 4
Figure 2. MRF6S21100HR3(SR3) Test Circuit Component Layout
MRF6S21100HR3 MRF6S21100HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 16.2 16 G ps , POWER GAIN (dB) 15.8 IM3 -U IRL 15.4 15.2 ACPR -L 15 2080 2100 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) 2120 2140 2160 2180 IM3 -L ACPR -U -42 -44 2200 -40 IM3 (dBc), ACPR (dBc) 15.6 -38 -10 -20 -30 -40 VDD = 28 Vdc Pout = 23 W (Avg.) IDQ = 950 mA D 2-Carrier W-CDMA 10 MHz Carrier Spacing Gps -36 28 27
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 23 Watts Avg.
D 15.4 G ps , POWER GAIN (dB) 15.2 15 14.8 14.6 14.4 2080 VDD = 28 Vdc Pout = 55 W (Avg.) IDQ = 950 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth IM3 -L IM3 -U PAR = 8.5 dB @ 0.01% Probability (CCDF) ACPR -U ACPR -L 2100 2120 2140 2160 2180 f, FREQUENCY (MHz) -28 -30 2200 Gps 42 40 -24 -26
D, DRAIN EFFICIENCY (%)
15.6
44
IRL
IM3 (dBc), ACPR (dBc)
-10 -20 -30 -40
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 55 Watts Avg.
17.5 17 G ps , POWER GAIN (dB) 16.5 16 15.5 15 14.5 450 mA 14 13.5 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two -Tone Measurements, 10 MHz Tone Spacing 700 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1450 mA 1200 mA 950 mA -20 -25 -30 -35 -40 -45 -50 700 mA -55 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 950 mA IDQ = 450 mA 1450 mA 1200 mA VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two -Tone Measurements, 10 MHz Tone Spacing
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6S21100HR3 MRF6S21100HSR3 RF Device Data Freescale Semiconductor 5
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
-20 -25 -30 -35 -40 -45 -50 -55 -60 0.1 1 10 100 TWO -TONE SPACING (MHz) 7th Order 5th Order VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 950 mA Two -Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz 3rd Order
56 54 52 Actual 50 48 46 44 28 30 32 34 36 38 40 42 Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 950 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 2140 MHz P3dB = 51.5 dBm (141 W) P1dB = 50.9 dBm (123 W) Ideal
Figure 7. Intermodulation Distortion Products versus Tone Spacing
D, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 50 VDD = 28 Vdc, IDQ = 950 mA f1 = 2135 MHz, f2 = 2145 MHz 2-Carrier W-CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF)
Pout , OUTPUT POWER (dBm)
Figure 8. Pulsed CW Output Power versus Input Power
-10 D IM3 (dBc), ACPR (dBc) IM3 -20
40
30
-30 ACPR
20
Gps
-40
10 0 0.4 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100
-50 -60
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
18 16 G ps , POWER GAIN (dB) 14 12 10 8 D 6 1 10 Pout, OUTPUT POWER (WATTS) CW 100 200 VDD = 28 Vdc IDQ = 950 mA f = 2140 MHz Gps 60 50 D, DRAIN EFFICIENCY (%) 40 30 20 10 0 G ps , POWER GAIN (dB) 17
16
15
32 V
14 VDD = 24 V 13 IDQ = 950 mA, f = 2140 MHz 12 0 20 40 60 80 100 120 140 160 180 Pout, OUTPUT POWER (WATTS) CW 28 V
Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S21100HR3 MRF6S21100HSR3 6
Figure 11. Power Gain versus Output Power
RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
108
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 23 W Avg., and D = 27.6%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu- lators by product.
Figure 12. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK -TO-AVERAGE (dB) W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF +20 +30 0 -10 -20 -30 -40 -50 -60 -70 -80 -25 -ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW -IM3 in 3.84 MHz BW -20 -15 -10 -5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 3.84 MHz Channel BW
PROBABILITY (%)
f, FREQUENCY (MHz)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal
Figure 14. 2-Carrier W-CDMA Spectrum
MRF6S21100HR3 MRF6S21100HSR3 RF Device Data Freescale Semiconductor 7
f = 2200 MHz Zload f = 2080 MHz Zo = 10
f = 2200 MHz
Zsource f = 2080 MHz
VDD = 28 Vdc, IDQ = 950 mA, Pout = 23 W Avg. f MHz 2080 2110 2140 2170 2200 Zsource 2.44 - j6.3 2.25 - j6.1 2.09 - j5.8 1.98 - j5.6 1.85 - j5.4 Zload 1.83 - j3.0 1.74 - j2.8 1.61 - j2.6 1.59 - j2.5 1.52 - j2.3
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance MRF6S21100HR3 MRF6S21100HSR3 8 RF Device Data Freescale Semiconductor
TD - SCDMA CHARACTERIZATION
R2 B1 VBIAS R1 + C1 + C2 C4 C3 C5 Z11 Z5 RF INPUT Z1 C6 DUT Z2 Z3 Z4 Z6 Z7 Z8 Z9 C7 Z10 RF OUTPUT C8 + C9 + C10 + C11 C13 + C12 VSUPPLY + C14
Z1 Z2 Z3 Z4 Z5 Z6
1.250 0.930 0.470 0.090 1.500 0.160
x 0.084 x 0.084 x 0.800 x 0.800 x 0.040 x 0.880
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z7 Z8 Z9 Z10 Z11 PCB
0.320 x 0.880 Microstrip 0.370 x 0.200 Microstrip 0.650 x 0.084 Microstrip 1.230 x 0.084 Microstrip 0.870 x 0.120 Microstrip Arlon GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 16. MRF6S21100HR3(SR3) Test Circuit Schematic -- TD - SCDMA
Table 6. MRF6S21100HR3(SR3) Test Circuit Component Designations and Values -- TD - SCDMA
Part B1 C1 C2 C3 C4, C13 C5 C6, C7 C8 C9, C10, C11, C12 C14 R1 R2 Ferrite Bead 1.0 F, 50 V Tantalum Capacitor 10 F, 50 V Electrolytic Capacitor 1000 pF 100B Chip Capacitor 0.1 F 100B Chip Capacitors 5.1 pF Chip Capacitor 15 pF Chip Capacitors 6.8 pF Chip Capacitors 22 F, 35 V Tantalum Capacitors 100 F, 50 V Electrolytic Capacitor 1.0 kW, 1/8 W Chip Resistor 10 W, 1/8 W Chip Resistor Description Part Number 2743019447 T491C105M050AT EEV - HB1H100P ATC100B102JT500XT CDR33BX104AKWY ATC100B5R1JT500XT ATC100B150JT500XT ATC100B6R8JT500XT T491X226K035AT 515D107M050BB6AE3 CRCW08051000FKTA CRCW080510R0FKTA Manufacturer Fair - Rite Kemet Panasonic ATC Kemet ATC ATC ATC Kemet Vishay/Sprague Vishay Vishay
MRF6S21100HR3 MRF6S21100HSR3 RF Device Data Freescale Semiconductor 9
R1 C1 B1 R2 C5 C8
C9 C10
C14
VGG C11 C2 C4 C6 C3 C12
VDD
C13
C7
CUT OUT AREA
2.1 GHz NI780 Rev 4
Figure 17. MRF6S21100HR3(SR3) Test Circuit Component Layout -- TD - SCDMA
MRF6S21100HR3 MRF6S21100HSR3 10 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
-30 -35 ALT/ACPR (dBc) -40 -45 -50 Alt-L -55 Alt-U -60 0 1 2 3 4 5 6 7 8 9 Pout, OUTPUT POWER (WATTS) AVG. 0 3 3-Carrier TD-SCDMA VDD = 28 V, IDQ = 800 mA f = 2017.5 MHz 18 D Adj -U Adj -L 12 9 6 15 D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%) 1.28 MHz Channel BW
Figure 18. 3 - Carrier TD - SCDMA ACPR, ALT and Drain Efficiency versus Output Power
-30 -35 -40 Adj -U -45 -50 -55 -60 0.5 Alt-U Adj -L Alt-L 9 6 3 0 1.5 2.5 3.5 4.5 5.5 6.5 7.5 Pout, OUTPUT POWER (WATTS) AVG. 6-Carrier TD-SCDMA VDD = 28 V, IDQ = 800 mA f = 2017.5 MHz D 18 15 12
ALT/ACPR (dBc)
Figure 19. 6 - Carrier TD - SCDMA ACPR, ALT and Drain Efficiency versus Output Power
TD - SCDMA TEST SIGNAL
-30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -ALT1 in 1.28 MHz BW -1.6 MHz Offset 1.5 MHz f, FREQUENCY (MHz) +ALT1 in 1.28 MHz BW +1.6 MHz Offset Span 15 MHz -ALT2 in 1.28 MHz BW -3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset (dBm) (dBm) 1.28 MHz Channel BW -30 VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz -40 -50 -60 -70 -80 -90 -100 -110 -120 -ALT1 in 1.28 MHz BW -1.6 MHz Offset 2.5 MHz f, FREQUENCY (MHz) +ALT1 in 1.28 MHz BW +1.6 MHz Offset Span 25 MHz -ALT2 in 1.28 MHz BW -3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz
-130 Center 2.0175 GHz
-130 Center 2.0175 GHz
Figure 20. 3 - Carrier TD - SCDMA Spectrum
Figure 21. 6 - Carrier TD - SCDMA Spectrum MRF6S21100HR3 MRF6S21100HSR3
RF Device Data Freescale Semiconductor
11
Zo = 5
Zload
f = 2070 MHz f = 1950 MHz
Zsource f = 2070 MHz
f = 1950 MHz
VDD = 28 Vdc, IDQ = 800 mA f MHz 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040 2050 2060 2070 Zsource W 1.04 - j4.28 1.07 - j4.31 0.96 - j4.13 0.82 - j3.71 0.79 - j3.34 0.82 - j3.15 0.88 - j3.16 0.84 - j3.30 0.83 - j3.47 0.91 - j3.71 0.91 - j3.90 0.81 - j3.81 0.76 - j3.45 Zload W 1.38 - j3.90 1.41 - j3.92 1.29 - j3.71 1.12 - j3.34 1.07 - j2.96 1.08 - j2.75 1.12 - j2.76 1.11 - j2.86 1.12 - j3.01 1.22 - j3.20 1.25 - j3.34 1.15 - j3.27 1.09 - j2.92
Zsource = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 22. Series Equivalent Source and Load Impedance -- TD - SCDMA MRF6S21100HR3 MRF6S21100HSR3 12 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M
3 (FLANGE)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465 - 06 ISSUE G NI - 780 MRF6S21100HR3
4X U (FLANGE)
B
1
4X Z (LID)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
(FLANGE)
B
2
2X
K
D bbb
M
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRF6S21100HSR3
MRF6S21100HR3 MRF6S21100HSR3 RF Device Data Freescale Semiconductor 13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 7 Date Jan. 2007 Description * Added "TD - SCDMA" to data sheet description paragraph, p. 1 * Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 * Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 * Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 * Adjusted scale for Fig. 5, Two - Tone Power Gain versus Output Power, to better match the device's capabilities, p. 5 * Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 * Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 * Added TD - SCDMA test circuit schematic, component designations and values, component layout, typical characteristic curves, test signal and series impedance, p. 9 - 12 * Added Product Documentation and Revision History, p. 14
MRF6S21100HR3 MRF6S21100HSR3 14 RF Device Data Freescale Semiconductor
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MRF6S21100HR3 MRF6S21100HSR3
Document Number: RF Device Data MRF6S21100H Rev. 7, 1/2007 Freescale Semiconductor
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